Wafer size: 6"-12"； 

X/Y placement accuracy: ±1µm@3σ;

Theta placement accuracy:

±0.01°@3σ(33mm>die>=10mm),

±0.05°@3σ(10mm>die>2mm)；

Specialized in handling multi-layer Die, heterogeneous integration of 2D, 2.5D, and 3D；

Real time Active Tip Tilt control system, which can accurately adjust the coplanarity of the pulse heater；

Accurate bond force control, capable of providing a maximum bond force of 300N and a pressure control accuracy of 0.05N；

Inert environment, realizing unique LPC process technology.